Collaborative Research: Low-noise high electron mobility transistors with outstanding nois — NSF Award to California Institute of
This program aims to create semiconductor amplifiers with outstanding noise performance in the microwave spectrum. Researchers from the California Institute of Technology (CalTech) and the University of Nevada-Reno (UNR) will accomplish this goal by leveraging a new nanofabrication method, atomic layer etching, which p
| Award title | Collaborative Research: Low-noise high electron mobility transistors with outstanding nois |
|---|---|
| Award ID | 2511983 |
| Awardee | California Institute of Technology |
| City | PASADENA |
| State | CA |
| Amount obligated | $928,455 |
| Principal investigator | Austin Minnich |
| Program | ADVANCED TECHNOLOGIES & INSTRM |
| Start date | 10/01/2025 |
| Abstract | This program aims to create semiconductor amplifiers with outstanding noise performance in the microwave spectrum. Researchers from the California Institute of Technology (CalTech) and the University of Nevada-Reno (UNR) will accomplish this goal by leveraging a new nanofabrication method, atomic layer etching, which permits semiconductor device manufacturing with atomic-scale precision. If successful, these new amplifiers will be 30% more sensitive to radio emissions from space, meaning that le |
| Source | NSF Awards |
$799/mo
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