CREST Phase I Center for Ultrawide Bandgap Semiconductor Device Materials — NSF Award to Texas State University - San Marcos (TX,
With support from the Centers of Research Excellence in Science and Technology (CREST) and the Engineering Research Centers (ERC), this project aims to facilitate a center for ultrawide bandgap semiconductor device materials and education. The project plans to combine semiconductor materials fabrication, processing, an
| Award title | CREST Phase I Center for Ultrawide Bandgap Semiconductor Device Materials |
|---|---|
| Award ID | 2514718 |
| Awardee | Texas State University - San Marcos |
| City | SAN MARCOS |
| State | TX |
| Amount obligated | $7,500,000 |
| Principal investigator | Edwin Piner |
| Program | Centers for Rsch Excell in S&T, ERC-Eng Research Centers |
| Start date | 09/01/2025 |
| Abstract | With support from the Centers of Research Excellence in Science and Technology (CREST) and the Engineering Research Centers (ERC), this project aims to facilitate a center for ultrawide bandgap semiconductor device materials and education. The project plans to combine semiconductor materials fabrication, processing, and characterization strategies along with modern Artificial Intelligence (AI). The researchers will focus on ultrawide bandgap (UWBG) semiconductors for next-generation devices oper |
| Source | NSF Awards |
$799/mo
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