Development of magnesium zinc oxide deep ultraviolet semiconductor lasers — NSF Award to University of California-Riverside (CA, $
A diode laser device is made from semiconductor, a material with its electrical conductivity dictated by the quantities of negatively and positively charged mobile particles within itself, which are referred as electrons and holes, respectively. An n-type semiconductor possesses more electrons than holes while a p-type
| Award title | Development of magnesium zinc oxide deep ultraviolet semiconductor lasers |
|---|---|
| Award ID | 2512397 |
| Awardee | University of California-Riverside |
| City | RIVERSIDE |
| State | CA |
| Amount obligated | $375,000 |
| Principal investigator | Jianlin Liu |
| Program | EPMQD: Electronic, Photonic, M |
| Start date | 10/01/2025 |
| Abstract | A diode laser device is made from semiconductor, a material with its electrical conductivity dictated by the quantities of negatively and positively charged mobile particles within itself, which are referred as electrons and holes, respectively. An n-type semiconductor possesses more electrons than holes while a p-type semiconductor has more holes than electrons. Traditional diode laser devices contain a key component equivalent to a p-n junction, where electrons and holes meet and recombine to |
| Source | NSF Awards |
$799/mo
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