ENG-SEMICON: Manufacturing USA: Plasticity-Induced Cu-Cu Bonding for Scalable 3D Chip Inte — NSF Award to SUNY at Binghamton (NY,
Recent advancements in artificial intelligence (AI) are driving an unprecedented need for higher interconnect density in 3D-stacked semiconductor chips, with interconnect pitches scaling less than 1 micrometer. However, such ultrafine-scales cannot be achieved using current microbump technology, necessitating the devel
| Award title | ENG-SEMICON: Manufacturing USA: Plasticity-Induced Cu-Cu Bonding for Scalable 3D Chip Inte |
|---|---|
| Award ID | 2436980 |
| Awardee | SUNY at Binghamton |
| City | BINGHAMTON |
| State | NY |
| Amount obligated | $290,000 |
| Principal investigator | Junghyun Cho |
| Program | AM-Advanced Manufacturing |
| Start date | 07/01/2025 |
| Abstract | Recent advancements in artificial intelligence (AI) are driving an unprecedented need for higher interconnect density in 3D-stacked semiconductor chips, with interconnect pitches scaling less than 1 micrometer. However, such ultrafine-scales cannot be achieved using current microbump technology, necessitating the development of novel approach such as ‘bumpless’ hybrid bonding that enables simultaneous copper-to-copper (Cu-Cu) and dielectric-dielectric (SiO2-SiO2) bonding. Despite its potential f |
| Source | NSF Awards |
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