ERI: LPCVD-Based Growth and Etching of Gallium Oxide for High Aspect Ratio Vertical Trench — NSF Award to University of Massachuse
Abstract Title: ERI: Low Pressure CVD-Based Growth and Etching of Gallium Oxide for High Aspect Ratio Vertical Trench Schottky Barrier Diodes Abstract: As electricity demand continues to grow across diverse sectors including electric transportation, smart grids, renewable energy, aerospace, industrial automation, and d
| Award title | ERI: LPCVD-Based Growth and Etching of Gallium Oxide for High Aspect Ratio Vertical Trench |
|---|---|
| Award ID | 2501623 |
| Awardee | University of Massachusetts Lowell |
| City | LOWELL |
| State | MA |
| Amount obligated | $200,000 |
| Principal investigator | Anhar Bhuiyan |
| Program | ERI-Eng. Research Initiation |
| Start date | 10/01/2025 |
| Abstract | Abstract Title: ERI: Low Pressure CVD-Based Growth and Etching of Gallium Oxide for High Aspect Ratio Vertical Trench Schottky Barrier Diodes Abstract: As electricity demand continues to grow across diverse sectors including electric transportation, smart grids, renewable energy, aerospace, industrial automation, and data-intensive computing, the need for efficient, compact, and reliable power management has become increasingly critical. Electricity is emerging as the dominant form of energy con |
| Source | NSF Awards |
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