SBIR Phase I: Developing Energy-Efficient 3D Memory Using Advanced Indium Gallium Zinc Oxi — NSF Award to ATOMOS 3D LLC (IN, $304,
The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project lies in addressing the urgent need for energy-efficient hardware to support the rapid growth of artificial intelligence (AI). As AI applications expand to devices like smartphones, wearables, and autonomous systems
| Award title | SBIR Phase I: Developing Energy-Efficient 3D Memory Using Advanced Indium Gallium Zinc Oxi |
|---|---|
| Award ID | 2528261 |
| Awardee | ATOMOS 3D LLC |
| City | WEST LAFAYETTE |
| State | IN |
| Amount obligated | $304,994 |
| Principal investigator | Hao-Yu Lan |
| Program | SBIR Phase I |
| Start date | 10/01/2025 |
| Abstract | The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase I project lies in addressing the urgent need for energy-efficient hardware to support the rapid growth of artificial intelligence (AI). As AI applications expand to devices like smartphones, wearables, and autonomous systems, the energy inefficiency of current hardware limits deployment. This project introduces a new type of ultra-dense memory, called 3D Gain-Cell Random Access Memory (GCRAM), built u |
| Source | NSF Awards |
$799/mo
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